In conventional on-axis sputtering, plasma and high energy ions/atoms may damage the desired film, leading to unexpected properties. Therefore, off-axis and face target sputtering are developed.
Face target sputtering
The advantages of FTS:
1) Less plasma damage
2) Less high energy ions/atoms bombardment. Expected to be the same energy as in the thermal evaporation process
3) Low heating up to substate. As shown in above setup, the ICP power increase the plasma density between target electrodes. As a results, plasma potential will become lower; so is the potential difference between the substrate and the plasma. This smaller potential difference between the plasma and the substrate might result in smaller increase of substrate temperature.
off-axis sputtering
Similar advantages can be achieved through off-axis sputtering as shown in the following figure.
